Abstract
AbstractThe maximum junction temperature (Tj,max) of high power laser diode array is cooled down by 13% using channel flow method; the junction temperature deviation is also improved by 30% using vapor chamber. With the channel flow design, Tj,max can be lower 6% by introducing air deflector, and lower additional 4% by optimizing the air separator length. With the heat sink aspect ratio optimization, Tj,max can be lower additional 3% by introducing vapor chamber. Furthermore, by the TO‐CAN packaged laser diode device model, the heat path and the distribution of the thermal resistance are thoroughly investigated.
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