Abstract
In this paper, we present a 60 GHz-band low noise amplifier (LNA) and a 60 GHz-band power amplifier (PA) utilizing high performance InGaP/GaAs HBTs. The InGaP/GaAs HBTs feature a highly doped base layer, a self-aligned base contact and an undercut collector mesa structure in order to achieved low noise and high gain in the millimete-wave band. By adjusting the collector current of each HBT in the LNA to the optimum value a noise figure as low as 5.8 dB with a gain of more than 25 dB was obtained. The PA exhibited a linear gain of more than 15 dB with P1dB of 13 dBm in the 60 GHz-band.
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