Abstract
A compact 60-GHz on-chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The miniaturization is achieved by the half-mode substrate-integrated waveguide (HMSIW) structure. Finally, a prototype of the BPF is fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. The measurements show that it has a center frequency at 58.6 GHz with a bandwidth of 17.9%, and the minimum insertion loss within the passband is 1.2 dB. The chip, excluding the feedings, is only about 0.38λg × 0.58λg, where λg is the guided wavelength at the center frequency.
Highlights
Recent developments in semiconductor technology have enabled the pursuit of miniaturized applications based on on-chip millimeter-wave devices and systems to become popular, such as automotive mmW radar
The prototype of the designed half-mode substrate-integrated waveguide (HMSIW) bandpass filter (BPF) filter is fabricated as shown in the inset of Figure 6
The results demonstrate that both insertion loss (IL) and size of our proposed HMSIW filter are better than those of the substrate-integrated waveguide (SIW) filter in [11] using the same Gallium arsenide (GaAs) technology
Summary
Recent developments in semiconductor technology have enabled the pursuit of miniaturized applications based on on-chip millimeter-wave (mmW) devices and systems to become popular, such as automotive mmW radar. The design of GaAs–based BPFs that consider both size and loss has still not been proposed. Considering compatibility with the integrated circuit system, a BPF based on substrate-integrated waveguide (SIW) technology is introduced with high-Q factor, low loss, and easy fabrication [15]. Few BPF works are explored using HMSIW in GaAs technology at the millimeter-wave frequencies. Compared with the previous SIW/HMSIW BPFs [16,17,18,19,20,21,22,23], this design has relatively small insertion loss and size
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