Abstract
In this work, the perylene-monoimide/n-Si (100) Schottky structures have been fabricated by spin coating process. We have studied the capacitance–voltage (C–V) and conductance-voltage (G–V) characteristics of the Au/perylene-monoimide/n-Si diodes at 500 kHz before and after 60Co γ-ray irradiation. The effects of 60Co γ -ray irradiation on the electrical characteristics of a perylene-monoimide/n-Si Schottky diode have been investigated. A decrease both in the capacitance and conductance has been observed after 60Co γ -ray irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of 60Co γ-ray irradiation. Some contact parameters such as barrier height (ΦB) interface state density (Nss) and series resistance (Rs) have been calculated from the C–V and G–V characteristics of the diode before and after irradiation. It has been observed that the ΦB and Nss values are decreased after the applied radiation, while the Rs value is increased.
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