Abstract
The established trench field stop technology ‘IGBT3’ is transferred to 600 V devices and supplements the 1200 V and 1700 V family. Besides an adjustment of cell geometry and pitch for the optimum compromise between on-state loss and short-circuit current, the ability to process ultrathin wafers with a thickness of 70 μm is the most demanding requirement for this device. One of the most important steps with the 600 V device is the extension of the maximum junction temperature to 175°C, which is an increase of 25°C over the more common IGBT chips.
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