60 nm Γ-gate MOSFETs with self-aligned drain extension formed by solid phase diffusion

Kun-Hin To ,J.c.s Woo

doi:10.1109/drc.1999.806310

60 nm Γ-gate MOSFETs with self-aligned drain extension formed by solid phase diffusion

Kun-Hin To , J.c.s Woo

https://doi.org/10.1109/drc.1999.806310

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Publication Date: Jun 23, 1999

Affiliation: University of California, Los Angeles

#Solid Phase Diffusion #Spl Gamma + Show 8 more

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Abstract

60 nm /spl Gamma/-gate nMOSFETs with self-aligned drain extension formed by solid phase diffusion have been demonstrated. Very small gate length (Lg) was achieved by a spacer defined gate. Devices show small short channel effects as well as high transconductance. The /spl Gamma/ shaped gate architecture allows small gate resistance even with small Lg, which makes it a promising structure for CMOS RF circuits.

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