Abstract
A high-power and low-noise 60 GHz impact avalanche transit time (IMPATT) source based on GaInAsP∼InP heterojunction has been proposed. The simulation experiments are done on InP based homojunction and two complementary heterojunction structures based on GaInAsP∼InP material system, for studying the static, large-signal and noise properties of those at 60 GHz. Results depicts that the highest RF power output with lowest noise level can be achieved at 60 GHz when N∼p junction based on Ga0.11In0.89As0.74P0.26∼InP anisotype heterojunction is grown on (100)-oriented p+-InP wafer having acceptor concentration of ∼1025 m−3. The proposed heterojunction IMPATT source is capable of delivering 4.79 W peak power with 23.21% efficiency with significantly low noise measure of only 12.5 dB; which is especially suitable for implementing 60 GHz source for ultra-high speed, short-range wireless local area network (WLAN) applications based on IEEE 802.11ad protocol standards.
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