60 GHz 130-nm CMOS second harmonic power amplifiers

Abstract

Two different frequency doubling power amplifiers have been measured, one with differential and one with single-ended input, both with single-ended output at 60 GHz. The amplifiers have been implemented in a 1p8M 130-nm CMOS process. The resonant nodes are tuned to 30 GHz or 60 GHz using on-chip transmission lines, which have been simulated in ADS and momentum. The measured input impedance of the single-ended PA is high at 250 Omega, and the differential input is similar, making the PA a suitable load for an oscillator in a fully integrated transmitter. The single-ended and differential input PA delivers 1dBm and 3 dBm, respectively, of measured saturated output power to 50 Omega, both with a drain efficiency of 8%.