Abstract
In this paper, the contact model analysis based on gold (Au) and aluminum (Al) with distinct structures and bonding pads of GaN‐based Micro‐LED was proposed. Firstly, the fabrication process and three different structures (testing, bottom emitting and top emitting structures) with 30 −200µm size were introduced. Then, the electrical properties of testing structure were analyzed by extracting the series resistances and ideality factors. Next, the performances of two metals with bottom and top emitting structures were evaluated electrically and optically throughout the injection current at forward bias, leakage current at reverse bias, radiometric power and luminous flux. The final results indicated Au contact is superior to Al for the indium bonding pads on Micro‐LEDs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
