Abstract
This paper presents a 5.8 GHz RF–DC converter for high conversion efficiency and high output voltage based on a common-ground and multiple–stack structure. An RF isolation network (RFIN) for the multiple-stack RF–DC converter is proposed to combine the DC output voltage of each stack without separating its RF ground from the DC ground. The RFIN is designed using micro-strip transmission lines on a single-layer printed circuit board (PCB) with a common ground for the bottom plate. A 4-stack RF–DC converter based on a class-F voltage doubler for each stack was implemented to verify the proposed RFIN for the multiple-stack and common-ground structure. The performances of the implemented 4-stack RF–DC converter were evaluated in comparison to the single-stack converter that was also implemented. The size of the implemented 4-stack RF–DC converter using bare-chip Schottky diodes is 24 mm × 123 mm on a single-layer PCB. For an input power of 21 dBm for each stack of the RF–DC converter with a load resistance of 4 kΩ, a high efficiency of 73.1% and a high DC output voltage of 34.2 V were obtained.
Highlights
Microwave power transmission (MPT) technology has been developed for various wireless charging applications, such as space solar power systems, internet of things (IoT) sensors, medical devices, RF energy harvesting systems, and mobile devices
The simulated impedances are very close to 0 Ω, which is very important for the performances of the overall multi-stack RF–DC converter
A 5.8 GHz RF–DC converter with a common-ground and multiple-stack structure using the RF isolation network (RFIN) was presented for high efficiency and high output DC voltage
Summary
Microwave power transmission (MPT) technology has been developed for various wireless charging applications, such as space solar power systems, internet of things (IoT) sensors, medical devices, RF energy harvesting systems, and mobile devices. The authors in [9] realized a class-C operation at 2.45 GHz was realized using a shunt diode with short-circuited second and third harmonics, and reported an efficiency of 72.8% and an output voltage of 1.91 V using an input power of 8 dBm with a load resistance of 742 Ω. Reported a class-F rectifier at 2.45 GHz with a third harmonic matching circuit, and with even harmonic cancellation characteristics by using dual diodes and reported an efficiency of 75.4% at an input power of 20 dBm and a load resistance of 1 Ω. To increase the output DC voltage of the Rx for the MPT systems, an RFIN, which can be implemented using microstrip transmission lines on a single-layer PCB, is proposed for the common-ground and multiple-stack RF–DC converter. The measured performances of the implemented 4-stack RF–DC converter are presented in comparison to the implemented single-stack converter and some previously reported RF–DC converters
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