Abstract
By utilizing a green thermally activated delayed fluorescence (TADF) material with an appropriate device architecture, we demonstrate the performance of indium‐phosphide‐based red quantum dot light‐emitting diodes (QLEDs) with an external quantum efficiency that exceeds 11%. The prolonged photoluminescence lifetime in the quantum dot/TADF bilayer system suggests that there exists sufficient excitonic energy transfer from the TADF molecules to the direct bandgap of the quantum dot emitters. The combination of TADF and quantum dot materials can facilitate development of highly efficient cadmium‐free red/green/blue QLEDs.
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