Abstract

A high-gain InP MMIC (monolithic microwave integrated circuit) cascode distributed amplifier has been developed which has 12 dB of gain from 5 to 60 GHz with over 20 dB gain control capability and a noise figure of 2.5-4 dB in the Ka-band. Lattice-matched InAlAs-InGaAs cascode HEMTs (high electron mobility transistor) on InP with 0.25 mu m gate length were the active devices. Microstrip was the transmission medium for this MMIC with an overall chip dimensions of 2.3 by 0.9 mm/sup 2/. >

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