Abstract
A high-gain InP MMIC (monolithic microwave integrated circuit) cascode distributed amplifier has been developed which has 12 dB of gain from 5 to 60 GHz with over 20 dB gain control capability and a noise figure of 2.5-4 dB in the Ka-band. Lattice-matched InAlAs-InGaAs cascode HEMTs (high electron mobility transistor) on InP with 0.25 mu m gate length were the active devices. Microstrip was the transmission medium for this MMIC with an overall chip dimensions of 2.3 by 0.9 mm/sup 2/. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
