Abstract
AbstractThe effects of He content in He‐Ne‐Xe (11 %) on the reset and address discharges were examined under variable panel temperature ranging from −5 to +65°C. The changes in the firing voltages under the X‐Y surface or the A‐Y plate‐gap discharges were measured using the Vt close‐curve method when the He contents and panel temperature were varied. Under the variable panel temperature condition, the IR emission intensities were also monitored during the reset and address discharges when the He contents were varied from 0 to 50 %. It was observed that as the panel temperature was increased, the higher He content could facilitate the reset and address discharges.
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