Abstract
AbstractFlexible CMOS has been achieved by combining nMOS a‐Si:H with pMOS pentacene thin film transistors on a plastic substrate. Flexible CMOS enables more than 300x reduction in power consumption for integrated source drivers for an electrophoretic display compared to a‐Si:H only source drivers. Importantly, flexible CMOS reduces the source driver power well below the power required by the electrophoretic display backplane greatly extending battery life. Measurements on the electrical stress induced degradation of flexible CMOS logic gates are also presented.
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