Abstract
This paper provides indentation crack patterns and fracture toughness on single crystal silicon wafers introduced by a Vickers Indenter. In this study, fracture toughness(K_<IC>) was measured on the major planes of single crystal silicon using indentation fracture (IF) method at room temperature. The values of K_<IC> on various major surface were obtained by IF method. It appears that K_<IC> on each surface orientation decreases slightly with increasing elastic parameter including Young's modulus and Poisson's ratio.
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