500 Gates GaAs Gate Array

Abstract

High speed GaAs DCFL gate array consisting of 500 3-INPUT NOR gates, in which 2000 FETs are integrated, has been successfully fabricated by a Pt buried gate planar E/D process technology. Eleven different 15-stage ring oscillators were made on this gate array to investigate the dependence of gate performance on various loading conditions. Typical propagation delay times per gate were 0.16 ns and 0.69 ns under unloaded and loaded (fan-out=3, interconnection length=3 mm, cross-over=20) conditions at a power dissipation of 0.50 mW for 1.7 µm gate devices.