Abstract
Thin films were deposited on Si substrates by magnetron sputtering. 5 nm Ru-B, Ta-B and Ru-Ta-B were prepared on the Si substrate as diffusion barrier, and then the Cu/barrier/Si scheme was annealed in Ar+H2 (5%) and at a temperature between 200℃ and 750℃. The properties of the films were analyzed by four-point probe (FPP), x-ray diffraction (XRD), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). The result show that Cu/Ru61.3B38.6/Si has a failure temperature of 640℃, and the failure is resulted from Cu has penetrated through diffusion barrier to form Cu3Si with Si substrate. The results also showed that Ru-Ta-B is superior to Ta-B as a barrier, and Ru85.89Ta4.14B9.88 has a failure temperature of 630℃. Bi-layer Ru (2 nm)/B-Ta (3 nm) barrier. The result showed Cu/ Ru/Ta48.1B51.8/Si thin film has a failure temperature of 640℃, which is higher than that of Ru85.89Ta4.14B9.88.
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