Abstract
AbstractIn this study, we propose a 5‐GHz differential RF CMOS low noise amplifier (LNA) with electrostatic discharge (ESD) protection method in the RF input and output using spiral transformers. Spiral transformers are used as the ESD protection elements as well as the components of the input and output matching networks. During an ESD event, the transformers become the path through which the ESD current shunts because the frequency of the ESD is much lower than the operating frequency of the general RF circuit. The designed LNA is implemented using a 0.18‐µm RF CMOS process. The measured ESD survival level is higher than 1.4 kV. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:684–689, 2014
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