Abstract
We demonstrate a new design for a XOR optical gate operating in the GHz regime using the cross-polarization modulation effect in a semiconductor optical amplifier. Dynamic and optically controlled polarization rotation in the devices is used to control the output power of the device. Static extinction ratio of the order of 20 dB can be obtained. Bit rate doubling at rate of 1.2 and 2.5 Gb/s have been demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
