Abstract
Implantation-free 4H-SiC bipolar junction transistors with multiple-shallow-trench junction termination extension have been fabricated. The maximum current gain of 40 at a current density of 370 A/ $\mathrm{cm}^{2}$ is obtained for the device with an active area of 0.065 $\mathrm{mm}^{2}$ . A maximum open-base breakdown voltage (BV) of 5.85 kV is measured, which is 93% of the theoretical BV. A specific on-resistance ( $R_{\mathrm{{\scriptstyle ON}}}$ ) of 28 m $\Omega \cdot {\rm cm^{2}}$ was obtained.
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