Abstract
A five-stage W-band low-noise amplifier (LNA) based on the authors' InP/InGaAs double heterojunction bipolar transistors (DHBTs) process is reported. The LNA achieves a peak gain of 33.1 dB and 7.8 dB noise figure at 81GHz. Its output-related 1 dB compression point (P1dB) lies at 5.8 dBm. The high gain and linearity of the LNA is mainly attributed to the performance of the DHBTs exhibiting a high breakdown voltage (BVceo>8.7V), a current gain cutoff frequency (fT) of 167GHz, and a maximum oscillation frequency (fmax) of 265GHz.
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