Abstract
Highly efficient 670-nm high-power broad-area laser diodes with a single InGaP quantum-well embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers are presented. The developed vertical layer structure leads to a vertical far-field angle of 31deg. At 15degC, 100 mu-m-wide broad-area lasers reach an output power of 5.6 W limited by thermal rollover. The conversion efficiency was 41% at 1.5 W. A 7600-h reliable operation at 1.5 W and a mean time to failure of about 37550 h will be reported.
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