Abstract
The use of 4-methyl-1,2,3-selenadiazole as a precursor for the chemical vapour deposition of selenium-containing materials has been investigated. The results indicate that this is a useful precursor for the low-temperature plasma-assisted chemical vapour deposition of selenium, with a growth rate of 500 A min–1 being achieved with a substrate temperature of 40 °C and a plasma power density of 1 W cm–2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
