Abstract
This paper describes the present state of a nitrogen-based passivation forSiO2 layers on 4H-SiC. Interface state density, oxide breakdown field, channel mobility and gateoxide reliability have been characterized following nitric oxide (NO) passivationanneals. The kinetics of nitrogen incorporation and the quantitative modellingbetween nitrogen content and interface trap density with NO anneals have also beendiscussed.
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