4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K

Abstract

Testing of semiconductor electronics at temperatures above their designed operating envelope is recognized as vital to qualification and lifetime prediction of circuits. This work describes the high temperature electrical testing of prototype 4H silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) technology implemented with multilayer interconnects; these ICs are intended for prolonged operation at temperatures up to 773K (500 °C). A 50 mm diameter sapphire wafer was used in place of the standard NASA packaging for this experiment. Testing was carried out between 300K (27 °C) and 1150K (877 °C) with successful electrical operation of all devices observed up to 1000K (727 °C).