Abstract
Drift-diffusion model simulations of a pn-pn-pn type silicon carbide modified-anode gate turn-off (MA-GTO) thyristor structure indicate that the addition of thin n-p layers below the p-type anode region assists hole injection into the drift region of the thyristor. This allows current crowding to be avoided by increasing the dopant concentration of the n-type gated base layer without the consequence of a drastic increase in on-state voltage drop and holding current.
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