Abstract
A 4H-SiC trench MOSFET has been developed that features trench gates with a thick oxide layer on the bottoms of the trenches. The maximum electric field strength and gate-drain charge of this device are 46% and 38%, respectively lower than that of a conventional MOSFET. The drain-source breakdown voltage is 1400V and the specific on-resistance is 4.4mΩcm2 at a gate bias of 20V and a drain voltage of 2V.
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