4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating

Abstract

4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) of 10 A/1.7 kV rating were fabricated and characterized. Suitable design of a drift layer and a junction termination realized stable avalanche breakdown of 1.8 kV. Relatively low on-resistances of 8.3 mΩ cm2 for the MOSFET and 2.2 mΩ cm2 for the SBD were successfully recorded. Temperature dependence of the static characteristics of the SBD showed positive temperature coefficient in both the avalanche breakdown voltage and the differential on-resistance. The MOSFET and SBD were assembled into an SiC module. Its dynamic characterization revealed that the switching loss reduction in the SiC module was as much as 86% in comparison with that of the conventional Si counterpart under a moderate switching condition.