Abstract
4H-silicon carbide (SiC) normally-off vertical junction field-effect transistor (JFET) is developed in a purely vertical configuration without internal lateral JFET gates. The 2.1-μm vertical p/sup +/n junction gates are created on the side walls of deep trenches by tilted aluminum (Al) implantation. Normally-off operation with blocking voltage V/sub bl/ of 1 726 V is demonstrated with an on-state current density of 300 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at a drain voltage of 3 V. The low specific on-resistance R/sub on-sp/ of 3.6 m/spl Omega/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> gives the V/sub bl/ <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /R/sub on-sp/ value of 830 MW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , surpassing the past records of both unipolar and bipolar 4H-SiC power switches.
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