Abstract
According to a semiconductor device manufacturing method of the invention, a first polycrystalline silicon layer doped with an impurity, a thin oxide film, a second polycrystalline silicon layer, and a silicon nitride film are sequentially formed, one upon the other. The silicon nitride film, the second polycrystalline silicon layer, the thin oxide film, and the first polycrystalline silicon layer are then etched, in a self-aligned manner, by means of a photolithography process. A thick oxide film is formed on a side wall portion of the first polycrystalline silicon layer, using the silicon nitride film as a mask, and after the silicon nitride film is removed, a conductive film is formed on the entire surface. Since a film formation process advances without patterning the first polycrystalline silicon layer, the first polycrystalline silicon layer is not damaged by an RIE process and the like. A defect density of the oxide film formed on the first polycrystalline silicon layer can be reduced. Since the thick oxide film is formed on the side wall portion of the first polycrystalline silicon layer, a withstand voltage and reliability of this portion are largely improved.
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