Abstract
A new method of multi N+ and thicker N+ film were used to lower the leakage current of amorphous silicon TFT to improve the image sticking instead of normal single N+ layer in 4‐mask process. In this article, the improvement of the leakage current and the Vth shift by using the multi N+ and thicker N+ layer will be investigated.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
