Abstract
Near-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable of operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed yet energy-efficient transceivers are in need. Towards this direction we have previously demonstrated directly-modulated lasers (DMLs) capable of operating at 50 Gbps/lane with sub-pJ/bit efficiencies based on our novel membrane-III-V-on-Si technology. However, there exists an inherent tradeoff between modulation speed and power consumption due to the carrier-photon dynamics in DMLs. In this work, we alleviate this tradeoff by introducing photon–photon resonance dynamics in our energy-efficient membrane DMLs-on-Si design and demonstrate a device with a maximum 3-dB bandwidth of 47.5 GHz. This denotes a bandwidth increase of more than 2x times compared to our previous membrane DMLs-on-Si. Moreover, the DML is capable of delivering 60-GBaud PAM-4 signals under Ethernet’s KP4-FEC threshold (net data rate of 113.42 Gbps) over 2-km of standard single-mode fiber transmission. DC energy-efficiencies of 0.17 pJ/bit at 25 °C and 0.34 pJ/bit at 50 °C have been achieved for the > 100-Gbps signals. Deploying such DMLs in an integrated multichannel transceiver should ensure a smooth evolution towards Terabit-class Ethernet links and on-board optics subsystems.
Highlights
Operating at the core of most cloud-based applications, intra data center networks (DCNs) and high-performance computing systems (HPC) play an ever-increasing role in the modern ICT ecosystem
The “on-Si” fabrication allows us to potentially use large Si wafers and existing CMOS processes for further cost reduction, while we have demonstrated the co-integration of SiOx-based spot-size converters [6] and SiN-based arrayed waveguide grating (AWG) for space- and wavelength-division multiplexing (SDM/WDM) systems [7,8]
We expand on our recently published work [12], in which we demonstrated a bandwidth extension for our membrane directly-modulated lasers (DMLs) on Si by introducing a DL and photon–photon resonance (PPR)-generating longitudinal design based on the distributed Bragg reflector (DBR) method
Summary
Operating at the core of most cloud-based applications, intra data center networks (DCNs) and high-performance computing systems (HPC) play an ever-increasing role in the modern ICT ecosystem. In order to cope with this traffic growth, future deployments are targeting Terabit-class Ethernet (TbE) links [2] and on-board optics (OBO) subsystems [3], with target data rates exceeding 100 Gbps/lane. For such growth to be accommodated in a sustainable way, high-speed yet energy-efficient optical interconnects based on low-power consumption transceivers are in need. We have demonstrated low-power DMLs based on our novel membrane-III-V-on-Si technology [5,6,7,8] Owing to such a thin-film (
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