Abstract
AbstractA new flexible TFT backplane structure with improved mechanical reliability has been fabricated on a plastic substrate using amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin film transistors. The panel withstood 10,000 bending cycles at a bending radius of 5 mm without any noticeable TFT degradation. After the bending test, change of Vth, mobility, sub‐threshold slope, and gate leakage current were only −0.10V, −0.11cm2/V‐s, 0.01V/decade, and −1.03×10‐−12A, respectively. No line defects, dark spots, or bright spots appeared after 10K bending cycles at a bend radius of 10 mm.
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