Abstract
AbstractWe developed a novel method to control nucleation sites by means of SUS tip pressing on a‐Si. Nucleation and grain growth started from the tip‐pressed points. The ordered large grains with average size of 30 μm were realized. This technique can be used for the control of TFT position in active‐matrix displays to avoid grain boundary in a TFT channel. The electron back‐scattered diffraction (EBSD) analysis indicates that disk‐like grain has a single orientation although low angle misorientation grain boundaries remain.
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