4*4 GaAs/AlGaAs optical matrix switches with uniform device characteristics using alternating Delta beta electrooptic guided-wave directional couplers

Abstract

Integrated 4*4 GaAs/AlGaAs optical matrix switches constructed from 12 electrooptic directional couplers have been realized. In order to achieve uniform device characteristics, molecular beam epitaxy and reactive ion beam etching were chosen as the crystal growth technique and waveguide fabrication technique, respectively, in addition to the simplified tree structure as a matrix switch architecture. As a result, matrix switches with quite uniform device characteristics, such as small switching voltage deviation and little path dependence in +or-0.5-dB propagation loss, have been realized. >