Abstract
A new high-aperture ratio AMOLED pixel design scheme improving OLED life-time is proposed. The VDD supply line in each pixel is eliminated and the scan line supplies VDD to a pixel, thus a high-aperture ratio of emission area is considerably increased. The increased emission area achieves a lower current density through OLED, so that the OLED degradation would be suppressed and the life-time of OLED may be improved without varying the OLED materials. We also designed a storage capacitor employing the bank layer dielectric between ITO and cathode rather than typically used VDD line.
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