432-nm source based on efficient second-harmonic generation of GaAlAs diode-laser radiation in a self-locking external resonant cavity

Abstract

Using a potassium niobate crystal in a modified self-locking power-buildup cavity, we have frequency doubled the 865-nm output from a GaAlAs laser diode. With 12.4 mW of input power we have obtained a unidirectional output of 0.215 mW at 432 nm. In contrast to previous diode doubling experiments, the output was both single frequency and circular Gaussian. With better optics, substantially higher conversion efficiencies should be possible using this technique.