43.1: Invited Paper: Large‐area and high‐performance printed carbon nanotube and metal oxide thin film transistors and their applications

Abstract

With the rapid development of printable electronics, printed thin film transistors (TFTs) have attracted more and more attention due to their wide applications in novel applications including OLED, LED and QLED displays, E‐paper, and printed logic gates and circuits, neuromorphic electronics and wearable electronics.[1‐10] It is well‐known that performance of printed TFTs are largely depended on performance of printable semiconductor inks. Metal oxide and carbon nanotubes have been regarded as one of promising semiconductors for printed TFTs, since they show excellent electrical properties, solubility, high chemical and physical stability[1‐10]. In this work, we reported some new progresses of large‐scale and high‐performance printed carbon nanotube and metal oxide TFTS and their applications, including CMOS‐like gates, hybrid CMOS inverters and neuromorphic electronics. Printed SWCNT TFTs and metal oxide TFTs (64×64 arrays) with excellent electrical properties have been constructed on silicon and glass substrates. Both of them showed good mobility (more than 10 cm2 V‐1 s‐1) and high on/off ratios (107). Hybrid CMOS inverters based on printed metal oxide TFTs and carbon nanotube TFTs exhibited excellent properties with noise margin of 85%, voltage gain of 50, and low power consumption of 0.4 nW (Figure 1). Furthermore, flexible printed CMOS‐like inverters based on printed carbon nanotube TFTs showed with noise margin of 80%, voltage gain of more than 100, and accepted power consumption at low operation voltage (Figure 1).