Abstract
Combining the advantages of diode-end-pumped Nd: YVO4 and diode-side-pumped Nd: YAG amplifiers, a high average power and high beam quality picosecond laser is designed. The system delivers a picosecond laser with average power of 43.4W and good beam quality of M2<1.7. By focusing the high power picosecond laser in LBO crystal, 532nm green laser with maximal power of 20.8W is generated and the conversion efficiency of second-harmonic generation reaches 56.4% when 17.7W green laser obtained from the fundamental frequency laser with power of 31.4W and beam quality of M2<1.25.
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