Abstract
We have simulated the piezoresistivity in single-crystal silicon materials based on the first-principles calculations of model structures. Our novel approach to calculate the piezoresistance coefficients is valid qualitatively for electron transport in the multi-valley conduction band structure of n-type bulk silicon, in particular, the shear piezoresistance coefficient π_<44> can be presented clearly as a negative constant. For p-type bulk silicon, an easy additional procedure for the spin-orbit coupling in the valence bands gives an appropriate hole distribution and piezoresistance coefficients in a qualitative level. The calculation result that p-type <001> silicon nanowire will have a giant piezoresistivity is considered to be reliable.
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