Abstract
AbstractWe have developed novel growth technique for carbon nanotubes (CNTs) by using resist assisted patterned growth. The CNTs can be grown directly on the patterned catalyst surface without diffusion barrier. The growth site patterns were fabricated on Ni/Si substrate by a conventional lithography method using photo‐patternable resist. The CNTs are uniformly grown on various islands, which defined by selective positioning technology. Various numbers of island‐emitters were grown and measure the electron emission properties by using diode structure. The total electron emission characteristic shows very linear with number of island emitters. Emission current of the one‐emitter island is 7.8 nA at 9 V/μm with 40 μm pitch, 10 μm island diameter.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
