超高頻(40.68 MHz)電漿輔助化學氣相沉積異質接面太陽能電池於後製程快速退火與後氫電漿處理效率改善之研究

Abstract

In this work, we studied on how to use post hydrogen (H2) plasma treatment and RTA treatment to improve HIT solar cell performance. First, we adjusted the Si thin film deposition parameters, and optimized HIT solar cell characteristics. Then, we used device simulation software (AMPS-1D) to find out the optimized device structure. In these experiments, we tried to adjust the post hydrogen (H2) plasma treatment condition, such as H2 flux, plasma power, pressure and post H2 plasma treatment time to find the optimization deposition conditions. The dark IV result indicated that a low plasma power (100W), a low ambient pressure (0.75torr), and longer post H2 plasma treatment time (50 sec) is a preferable condition to enhance the HIT solar cell performance. In the solar cell photo IV measurement, when the post H2 plasma treatment was applied on HIT solar cell, a short circuit current density (Jsc) was improved around 5.2 % (from 13.92 mA/cm2 to 14.68 mA/cm2) and an 18.9 % increased fill-factor (F. F.) were observed (from 49.5 to 61.0). Voc was increased significantly about 16.7 % (from 0.75 V to 0.90 V). Besides, the overall efficiency increased around 35.8 % was also achieved (from 5.17 % to 8.05 %). In addition, we tried to use the rapid thermal annealing (RTA) treatment to improve HIT solar cell performance. We used different RTA parameters, and found the best device characteristics under RTA temperature about 200℃. In these series of solar cell photo IV measurement, when the RTA treatment was used on HIT solar cell, a short circuit current density (Jsc) was improved around 15.4 % (from 14.68 mA/cm2 to 17.36 mA/cm2) and an 13 % increased fill-factor (F. F.) were observed (from 61.0 to 70.1 ). Voc was increased about 1.1 % (from 0.90 V to 0.91 V). Besides, the overall efficiency increased around 27.3 % was also achieved (from 8.05 % to 11.07 % ).