Abstract
The results of research on the creation and development of microwave radiation sources in the long-wave part of the terahertz range (100-400 GHz) using double-drift impact avalanche and transit-time diodes (IMPATT diodes) are presented. Minimum contour losses and maximum output power of low impedance IMPATT diodes are achieved in the oscillatory system on the open radial transmission feeder. Equivalent circuits of generators are considered, and electrophysical parameters of IMPATT structures are given. Schemes of designs of microwave radiation sources and their main parameters are given.
Highlights
In the millimeter and submillimeter wavelength ranges, the level of microwave power of continuous and pulsed IMPATT diodes is one of the most important parameters
A radical way to solve the problem of building generators on IMPATT diodes with high energy characteristics is to create a design of packaged diodes that preserves the principle of resonant transformation of the diode impedance
In order to increase the level of output microwave power of radiation sources in the shortwave part of the millimeter wavelength range, it is more advantageous to use double-drift impact avalanche and transit-time structures
Summary
In the millimeter and submillimeter wavelength ranges, the level of microwave power of continuous and pulsed IMPATT diodes is one of the most important parameters. The oscillating system for diodes should be performed on an open radial transmission feeder. In this case, a fairly high impedance of the transmission line is transformed into a relatively low load impedance of the radial line. Total losses in impedance transformers should be minimal
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