Abstract
A new technique and setup that enable pulsed I/V measurements of heterojunction bipolar transistors (HBTs) using very narrow 40 ns pulse widths is proposed. The characterisation methodology consists in driving the transistor base with constant direct current (DC current) while applying pulsed collector-emitter voltages (V ce ). The V ce quiescent value is set to 0V. The V ce pulse peak is monitored to scan the I c /V ce network. InGaAs/InP HBTs from Alcatel Thales III-V Lab have been measured for pulse widths varying from 300 down to 40 ns. The reported measurement results highlight the potential advantages of the proposed technique for transistor electro-thermal characterisation and modelling.
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