Abstract

A high-speed and high-gain modulator driver circuit using 0.15 /spl mu/m gate length GaAs pHEMT technology is presented. The IC was developed for driving electroabsorption modulators in 40 Gbit/s optical fibre systems. To meet application requirements a lumped-element approach was used with differential configuration. Measured results show the circuit operates at 40 Gbit/s with a swing of 3 V/sub p-p/ for single-ended and 6 V/sub p-p/ for differential output, and 8/10 ps rise/fall times.

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