Abstract

A low-power 2×2 switch IC using InP HEMTs as cold FETs is presented. It has a logic-level-independent interface since no signal line is grounded. The IC yields low insertion loss of 1.5–2.7 dB and high isolation of >21.2 dB below 30 GHz. When two 40 Gbit/s signals were input, error-free operation was confirmed with virtually zero power dissipation.

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