Abstract
We propose a newly designed X-cut lithium niobate (LiNbO/sub 3/) optical modulator. It has a two-step back-slot structure to satisfy the velocity-matching condition without the buffer layer of silicon dioxide (SiO/sub 2/). Accordingly, this modulator can achieve low drive voltage and low optical insertion loss. In addition, the dc-drift phenomena due to the buffer layer can be suppressed. This structure is fabricated with micromachining technology using excimer laser ablation. The optical 3-dB bandwidth of the fabricated modulator reaches 30 GHz, and the drive voltage is less than 3 V at 1 kHz. From the measurement of the optical eye diagram at 43.5-Gb/s, clear eye openings were obtained. This modulator is sufficient for 40-Gb/s optical transmission systems.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
