Abstract
To develop high performance p‐type electronic materials, we have investigated about high mobility metal halide semiconductors, such as CuI and CsSnI3. The facile Cu and I vacancy generations in CuI hinder the proper control of electrical properties of CuI. We have developed the mild processing of CuI with solution precursor, which enabled high performance thin‐film transistor (mobility ~2 cm 2 /Vs) and high electrical conductivity ( > 500 S/cm). Moreover, the optimized CsSnI3 TFT exhibit field‐effect hole mobility of over 50 cm 2 /Vs and on/off current ratios exceeding 10 8, as well as high operational stability and reproducibility.
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