Abstract
Thin films, heterostructures and quantum wells of gallium and indium arsenide phosphides have gained a widespread use in opto-electronics, especially in light emitting diode (LED)-based technologies. Low-dimensional structures of such phosphide and their alloys with As, Al, N and other elements have been intensively used to widen spectral ranges, and increase brightness of LED-based devices and lasers by orders of magnitude. For decades gallium and indium arsenide phosphide-based quantum wells, and since about 1990’s, quantum wires and dots (QDs), have been indispensable as structural elements of p-type semiconductor nanomaterials, sources of spin-polarized electrons and optical emitters, and nanomaterials for spin-dependent photoconductors and photocathodes for solar energy harvesting applications.
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