Abstract
High voltage (4 kV) merged PiN Schottky (MPS) rectifiers are analyzed and experimentally demonstrated for the first time, as an alternative to high voltage PiN diodes. Extensive simulations were performed to optimize the structure of the MPS rectifier. High voltage MPS rectifiers were successfully fabricated and were found to have forward drops comparable to that of PiN rectifiers. The measured reverse recovery characteristics of the MPS diodes showed far superior performance with half the peak reverse recovery current as well as one-fourth the stored charge of the PiN diode. The reverse leakage current of the MPS rectifier (20% Schottky area) was also found to be comparable to that of the PiN rectifier even at elevated temperatures.
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